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参数资料
| 型号： | IRHNJ594130 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 12.5AI（四）|贴片 |
| 文件页数： | 1/8页 |
| 文件大小： | 120K |
| 代理商： | IRHNJ594130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 150
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
9.4
6.0
37
75
0.6
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
5.5
7.5
16
-55 to 150
300 (for 5s)
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
7/20/00
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
For footnotes refer to the last page
SMD-0.5
IRHNJ7230
200V, N-CHANNEL
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ7230 100K Rads (Si) 0.40
IRHNJ3230 300K Rads (Si) 0.40
IRHNJ4230 600K Rads (Si) 0.40
IRHNJ8230 1000K Rads (Si) 0.53
I
D
9.4A
9.4A
9.4A
9.4A
PD - 93821
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNJ594230 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | SMT |
| IRHNJ597230 | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package |
| IRHNJ598130 | -100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package |
| IRHNJ598230 | -200V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package |
| IRHNJ7230 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ594230 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | SMT |
| IRHNJ597034 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 21A 3SMD-0.5 - Rail/Tube |
| IRHNJ597034SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ597130 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 12.5A 3SMD-0.5 - Rail/Tube |
| IRHNJ597130SCSA | 制造商:International Rectifier 功能描述:100V 12.500A HEXFET RADHARD - Bulk |
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