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参数资料
| 型号： | IRHNJ63130 |
| 厂商： | International Rectifier |
| 英文描述： | 100V, N-CHANNEL |
| 中文描述： | 100V的，N沟道 |
| 文件页数： | 5/8页 |
| 文件大小： | 179K |
| 代理商： | IRHNJ63130 |
www.irf.com
5
Pre-Irradiation
IRHNJ67130
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
2400
2800
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
0
4
8
12
16
20
VG
VDS = 80V
VDS = 50V
VDS = 20V
ID = 22A
FOR TEST CIRCUIT
SEE FIGURE 13
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
1
10
100
IS
VGS = 0V
TJ = 150°C
TJ = 25°C
1.0
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
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相关代理商/技术参数 |
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|---|---|
| IRHNJ63130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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| IRHNJ63230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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