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参数资料
| 型号： | IRHNJ7130 |
| 厂商： | International Rectifier |
| 英文描述： | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| 中文描述： | 100V的N通道抗辐射HEXFET MOSFET技术 |
| 文件页数： | 5/8页 |
| 文件大小： | 109K |
| 代理商： | IRHNJ7130 |
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5
IRHNJ7130
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
500
1000
1500
2000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
14 A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
T = 25 C
°
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNJ7130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ7130SCSB | 制造商:International Rectifier 功能描述:100V 14.400A HEXFET RADHARD - Bulk |
| IRHNJ7130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ7230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ7230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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