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参数资料
| 型号： | IRHNJ8130 |
| 厂商： | International Rectifier |
| 英文描述： | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| 中文描述： | 100V的N通道抗辐射HEXFET MOSFET技术 |
| 文件页数： | 8/8页 |
| 文件大小： | 109K |
| 代理商： | IRHNJ8130 |
IRHNJ7130
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 1.4mH,
Peak IL = 14.4A, VGS = 12V
ISD
≤
14.4A, di/dt
≤
395A/
μ
s,
VDD
≤
100V, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS:
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IR CANADA:
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IR GERMANY:
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IR ITALY:
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IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
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Data and specifications subject to change without notice. 3/00
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