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参数资料
| 型号： | IRHQ7214 |
| 英文描述： | 250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| 中文描述： | 250V 100kRad高可靠性四N通道工贸署在28硬化MOSFET的引脚LCC封装 |
| 文件页数： | 5/8页 |
| 文件大小： | 126K |
| 代理商： | IRHQ7214 |
www.irf.com
5
Pre-Irradiation
IRHQ7214
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
1
10
100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
0
4
Q , Total Gate Charge (nC)
8
12
16
20
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
1.6A
V
= 50V
DS
V
= 125V
DS
V
= 200V
DS
0.1
1
10
100
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
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