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参数资料
| 型号： | IRHQ8214 |
| 英文描述： | 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package |
| 中文描述： | 250V 1000kRad高可靠性四N通道工贸署在28硬化MOSFET的引脚LCC封装 |
| 文件页数： | 3/8页 |
| 文件大小： | 126K |
| 代理商： | IRHQ8214 |
www.irf.com
3
Pre-Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
(Per Die)
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 250 — 250 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 25 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 2.205 — 2.205
V
GS
= 12V, I
D
= 1.0A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 2.25 — 2.25
V
GS
= 12V, I
D
= 1.0A
On-State Resistance (LCC-28)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
100K Rads(Si)
1
300K to 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHQ7214, IRHQ3214 and IRHQ4214
2. Part number IRHQ8214
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 1.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation CharIRHQ7214
0
50
100
150
200
250
300
0
-5
-10
-15
-20
VGS
V
Cu
Br
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Cu
28.0
285 43.0 250 250 250 250 250
Br
36.8
305 39.0 250 250 250 225 210
LET
Energy Range
V
DS
(V)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHQ3214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ4214 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | LLCC |
| IRHQ9110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHQ93110 | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| IRHSLNA53064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHQ9110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHQ9110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ9110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHQ93110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSLNA53064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) |
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