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参数资料
| 型号： | IRHQ93110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 100V V(BR)DSS | 2.3A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的|阵| P通道| 100V的五（巴西）直| 2.3AI（四）| LLCC |
| 文件页数： | 8/8页 |
| 文件大小： | 132K |
| 代理商： | IRHQ93110 |
IRHQ9110
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -50V, starting TJ = 25
°
C, L= 28.4mH,
Peak IL = -2.3A, VGS = -12V
ISD
≤
-2.3A, di/dt
≤
-244A/
μ
s,
VDD
≤
-100V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions
—
LCC-28
Q1
Q2
Q3
Q4
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/00
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