参数资料
型号: IRHSNA54Z60
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
中文描述: 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 75A条(丁)|贴片
文件页数: 2/9页
文件大小: 113K
代理商: IRHSNA54Z60
IRHSNA57Z60
2
www.irf.com
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
30
Typ
Max Units
— V VGS = 0V, ID = 1.0mA
3.5 m
VGS = 12V, ID = 45A
Test Conditions
BVDSS
RDS(on)
VGS(th)
gfs
IDSS
2.0
45
— — 50
4.0
V VDS = VGS, ID = 1.0mA
S (
)
VDS > 15V, IDS = 45A
VDS = 24V, VGS=0V
50
mA
VGS = 0V, TJ = 125°C
100
— -100 nA
200 VGS =12V, ID = 45A,
55 nC VDS = 15V
40
35 VDD = 15V, ID = 45A,
160 ns
78
26
7.03
Measured from center of drain
pad to center of source pad
VDS = 24V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
VGS = 20V
nH
μ
A
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD
Diode Forward Voltage
Min Typ
Max Units
1.15
1.05
0.95
175
500
Test Conditions
TJ = -55°C, ID=45A, VGS = 0V
TJ = 25°C, ID= 45A, VGS = 0V
TJ = 110°C, ID=45A, VGS = 0V
Tj = 25°C, IF =45A, di/dt
100A/
μ
s
VDS
30V
Measured from center of drain pad to
center of source pad (for Schottky only)
trr
QRR
LS + LD Total Inductance
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
nH
8.09
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
V
Thermal Resistance
Parameter
RthJC
Junction-to-Case (MOSFET)
RthJC
Junction-to-Case (Schottky)
Min Typ Max
Units
Test Conditions
0.5
0.7
°C/W
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
相关PDF资料
PDF描述
IRHSNA57Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
IRHSNA58Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
IRHY3130CM TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA
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