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参数资料
| 型号： | IRHY53034CM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 16A条（丁）|对257AA |
| 文件页数： | 8/8页 |
| 文件大小： | 119K |
| 代理商： | IRHY53034CM |
IRHY57034CM
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L= 0.7 mH
Peak IL =18A, VGS =12V
ISD
≤
18A, di/dt
≤
234A/
μ
s,
VDD
≤
60V, TJ
≤
150
°
C
Footnotes:
Case Outline and Dimensions
—
TO-257AA
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 04/01
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