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参数资料
| 型号： | IRHY8130CM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 14.4AI（四）|对257AA |
| 文件页数： | 8/8页 |
| 文件大小： | 107K |
| 代理商： | IRHY8130CM |
8
www.irf.com
IRHY7130CM
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L=1.45mH
Peak IL = 14.4A, VGS =12V
ISD
≤
14.4A, di/dt
≤
395A/
μ
s,
VDD
≤
100V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
—
TO-257AA
3.05 [.120]
0.13 [.005]
0.71 [.028]
MAX.
B
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
3
2
1
15.88 [.625]
12.70 [.500]
3X
0.64 [.025]
0.50 [.020]
C A
B
2X
2.54 [.100]
C
10.66 [.420]
10.42 [.410]
A
13.63 [.537]
13.39 [.527]
3 3.81 [.150]
3 = GATE
1 = DRAIN
2 = SOURCE
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO J EDEC OUTLINE TO-257AA.
PIN ASSIGNMENTS
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