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参数资料
| 型号： | IRKH26/10P |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 60 A, 1000 V, SCR, TO-240AA |
| 封装： | LEAD FREE, TO-240AA COMPATIBLE, 5 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 242K |
| 代理商： | IRKH26/10P |
IRK.26 Series
Bulletin I27214 03/06
V
RRM , maximum
V
RSM , maximum
V
DRM , max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
IDRM
Code
peak reverse voltage peak reverse voltage
gate open circuit
125°C
-V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.26
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
I
T(AV)
Max. average on-state
current (Thyristors)
27
180o conduction, half sine wave,
I
F(AV)
Max. average forward
27
T
C = 85
o
C
current (Diodes)
I
O(RMS
) Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
400
t=10ms
No voltage
or
non-repetitive on-state
420
t=8.3ms reapplied
I
FSM
or forward current
335
t=10ms
100% V
RRM
350
t=8.3ms reapplied
470
t=10ms
T
J = 25
o
C,
490
t=8.3ms no voltage reapplied
I2t
Max. I2t for fusing
800
t=10ms
No voltage
730
t=8.3ms reapplied
560
t=10ms
100% V
RRM
510
t=8.3ms reapplied
1100
t=10ms
T
J = 25
o
C,
1000
t=8.3ms no voltage reapplied
I2
√t
Max. I2
√t for fusing (1)
8000
A2
√s
t=0.1to10ms,no voltage reappl. TJ=TJ max
V
T(TO) Max. value of threshold
0.92
Low level (3)
voltage (2)
0.95
High level (4)
r
t
Max. value of on-state
12.11
Low level (3)
slope resistance (2)
11.82
High level (4)
V
TM
Max. peak on-state or
I
TM = π x IT(AV)
T
J = 25
o
C
V
FM
forward voltage
I
FM = π x IF(AV)
di/dt
Max. non-repetitive rate
T
J = 25
o
C, from 0.67 V
DRM,
of rise of turned on
150
A/s
I
TM =π x IT(AV), I
g
= 500mA,
current
tr < 0.5 s, tp > 6 s
I
H
Max. holding current
200
T
J = 25
o
C, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
400
TJ =25oC,anode supply=6V,resistive load
T
J = TJ max
TJ = TJ max
Parameters
IRK.26
Units
Conditions
60
(1) I2t for time t
x = I
2√t x √t
x
(2) Average power
= V
T(TO) x IT(AV) + rt x (IT(RMS))
2
(3) 16.7% x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
On-state Conduction
Initial T
J = TJ max.
A
A2s
V
m
1.95
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Sinusoidal
half wave,
Initial T
J = TJ max.
Document Number: 94418
www.vishay.com
2
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| IRKH26/12S90P | 60 A, 1200 V, SCR, TO-240AA |
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相关代理商/技术参数 |
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|---|---|
| IRKH26-10S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|25A I(T) |
| IRKH26-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|25A I(T) |
| IRKH26-12S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|25A I(T) |
| IRKH26-14 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|25A I(T) |
| IRKH26-14S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|25A I(T) |
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