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参数资料
| 型号： | IRKH26/16A |
| 元件分类： | 晶闸管 |
| 英文描述： | 42.39 A, 1600 V, SCR, TO-240AA |
| 封装： | ADD-A-PAK-5 |
| 文件页数： | 3/8页 |
| 文件大小： | 146K |
| 代理商： | IRKH26/16A |
IRK.26 Series
3
Bulletin I27130 rev. G 10/02
www.irf.com
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.31
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.26
Units
Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT26/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
15
mA
T
J
= 125oC, gate open circuit
at VRRM, VDRM
V
INS
RMS isolation voltage
2500 (1 min)
V
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
500
V/
sT
J
= 125oC, linear to 0.67 V
DRM
,
Triggering
Blocking
P
GM
Max. peak gate power
10
P
G(AV)
Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
TJ = - 40°C
2.5
TJ = 25°C
1.7
TJ = 125°C
270
TJ = - 40°C
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
0.25
V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125oC,
rated V
DRM
applied
T
J
= 125oC,
rated V
DRM
applied
Parameters
IRK. 26
Units
Conditions
Parameters
IRK. 26
Units
Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.26
0.23
0.27
0.34
0.48
0.73
0.17
0.28
0.36
0.49
0.73
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
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PDF描述 |
|---|---|
| IRKH161-14 | 355 A, 1400 V, SCR |
| IRKH161-16D25 | 355 A, 1600 V, SCR |
| IRKH162-14D20 | 355 A, 1400 V, SCR |
| IRKH162-16D25 | 355 A, 1600 V, SCR |
| IRKH26/06S90 | 60 A, 600 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKH26-16S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.6KV V(RRM)|25A I(T) |
| IRKH26-18 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.8KV V(RRM)|25A I(T) |
| IRKH26-18S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.8KV V(RRM)|25A I(T) |
| IRKH27/12A | 功能描述:SCR MOD PWR 1200V 25A ADD-A-PAK RoHS:否 类别:半导体模块 >> SCR 系列:- 其它有关文件:SCR Module Selection Guide 标准包装:10 系列:- 结构:串联 - SCR/二极管 SCR 数目，二极管:1 SCR，1 个二极管 电压 - 断路:1600V 电流 - 栅极触发电流 (Igt)（最大）:150mA 电流 - 导通状态 (It (AV))（最大）:95A 电流 - 导通状态 (It (RMS))（最大）:210A 电流 - 非重复电涌，50、60Hz (Itsm):1785A，1870A 电流 - 维持(Ih):250mA 安装类型:底座安装 封装/外壳:ADD-A-PAK（3 + 2） 包装:散装 其它名称:*IRKL92/16AIRKL92/16IRKL92/16-ND |
| IRKH27/12P | 功能描述:SCR模块 1200 Volt 27 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
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