参数资料
型号: IRKH72/10
元件分类: 晶闸管
英文描述: 165 A, 1000 V, SCR, TO-240AA
文件页数: 2/10页
文件大小: 166K
代理商: IRKH72/10
IRK.71, .91 Series
10
Bulletin I27132 rev. D 09/97
www.irf.com
Fig. 23 - Thermal Impedance Z
thJC
Characteristics
Fig. 22 - Recovery Current Characteristics
Fig. 21 - Recovery Charge Characteristics
Fig. 24 - Gate Characteristics
20
40
60
80
100
120
140
10
20
30
40
50
60
70
80
90 100
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t-
Ir
r
(A
)
Rate Of Fall Of Forward Current - di/dt (A/s)
100 A
50 A
I
= 200 A
TM
20 A
10 A
IRK.71.. Series
IRK.91.. Series
T
= 125 °C
J
100
200
300
400
500
600
700
10
20
30
40
50
60
70
80
90 100
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/s)
M
a
xi
m
u
m
R
e
ve
rs
e
R
e
c
o
ve
ry
C
h
a
rg
e
-
Q
rr
(
C
)
I
= 200 A
TM
20 A
10 A
IRK.71.. Series
IRK.91.. Series
T
= 125 °C
J
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
e
n
tT
h
e
rm
a
lI
m
p
e
d
a
n
c
e
Z
(K
/W
)
Per Junction
Steady State Value:
R
= 0.33 K/W
R
= 0.27 K/W
(DC Operation)
IRK.71.. Series
IRK.91.. Series
thJC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
(b)
(a)
Rectangular gate pulse
(4)
(3) (2)
(1)
Instantaneous Gate Current (A)
In
st
a
n
ta
ne
o
u
s
G
a
te
V
o
lt
a
g
e
(
V
)
TJ
=
-
4
0
°C
TJ
=
2
5
°
C
TJ
=
125
°C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
(1) PGM = 200 W, tp = 300 s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 s, t p >= 6 s
rated di/dt: 20 V, 20 ohms
tr = 0.5 s, tp >= 6 s
IRK.71../.91.. Series
相关PDF资料
PDF描述
IRKH72/12S90 165 A, 1200 V, SCR, TO-240AA
IRKH72/14S90 165 A, 1400 V, SCR, TO-240AA
IRKH72/14 165 A, 1400 V, SCR, TO-240AA
IRKH91/06S90 210 A, 600 V, SCR, TO-240AA
IRKH91/08S90 210 A, 800 V, SCR, TO-240AA
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