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参数资料
| 型号： | IRKH92/08A |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 800 V, SCR, TO-240AA |
| 封装： | POWER, ADD-A-PAK-5 |
| 文件页数： | 4/11页 |
| 文件大小： | 335K |
| 代理商： | IRKH92/08A |
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
On-state Conduction
I
T(AV)
Max. average on-state
current (Thyristors)
180o conduction, half sine wave,
I
F(AV)
Max. average forward
T
C = 85
o
C
current (Diodes)
I
O(RMS
) Max. continuous RMS
on-state current.
165
210
As AC switch
I
TSM
Max. peak, one cycle
1665
1785
t=10ms No voltage
or
non-repetitive on-state
1740
1870
t=8.3ms reapplied
I
FSM
or forward current
1400
1500
t=10ms 100% V
RRM
1470
1570
t=8.3ms reapplied
1850
2000
t=10ms T
J = 25
o
C,
1940
2100
t=8.3ms no voltage reapplied
I2t
Max. I2t for fusing
13.86
15.91
t=10ms No voltage
12.56
14.52
t=8.3ms reapplied
9.80
11.25
t=10ms 100% V
RRM
8.96
10.27
t=8.3ms reapplied
17.11
20.00
t=10ms T
J = 25
o
C,
15.60
18.30
t= 8.3ms no voltage reapplied
I2√t
Max. I2√t for fusing (1)
138.6
159.1
KA2√s
t=0.1 to 10ms, no voltage reapplied,T
J = TJ max
V
T(TO)
Max. value of threshold
0.82
0.80
Low level (3)
voltage (2)
0.85
High level (4)
r
t
Max. value of on-state
3.00
2.40
Low level (3)
slope resistance (2)
2.90
2.25
High level (4)
V
TM
Max. peak on-state or
I
TM = π x IT(AV)
V
FM
forward voltage
I
FM = π x IF(AV)
di/dt
Max. non-repetitive rate
T
J = 25
o
C, from 0.67 V
DRM,
of rise of turned on
150
A/s
I
TM =π x IT(AV), I
g = 500mA,
current
t
r < 0.5 s, tp > 6 s
I
H
Max. holding current
2
50
T
J = 25
o
C, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
400
TJ =25oC,anode supply=6V, resistive load
Parameters
IRK.71
IRK.91
Units
Conditions
Initial T
J = TJ max.
A
KA2s
V
m
1.59
1.58
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM , maximum
V
RSM , maximum
V
DRM , max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
IDRM
Code
peak reverse voltage peak reverse voltage
gate open circuit
125°C
-V
V
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.71/ .91
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
Sinusoidal
half wave,
Initial T
J = TJ max.
75
95
T
J = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time t
x = I
2√t x √t
x
(2) Average power
= V
T(TO) x IT(AV) + rt x (IT(RMS))
2
(3) 16.7% x π x I
AV < I < π x IAV
(4) I > π x I
AV
Document Number: 93750
www.vishay.com
2
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