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参数资料
| 型号： | IRKHF200-08HJ |
| 厂商： | International Rectifier |
| 英文描述： | 200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极管H结构MAGN-A-pak功率模块) |
| 中文描述： | 200，磁共振-甲柏功率模块（200安培，8V的，快速可控硅/二极管?结构磁共振-甲柏功率模块） |
| 文件页数： | 2/8页 |
| 文件大小： | 154K |
| 代理商： | IRKHF200-08HJ |
IRK.F200.. Series
2
Bulletin I27099 rev. A 10/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
Type number
08
800
800
12
1200
1200
I
T(AV)
Maximum average on-state current
@ Case temperature
200
85
A
°C
180° conduction, half sine wave
I
T(RMS)
I
TSM
Maximum RMS current
444
A
as AC switch
Maximum peak, one-cycle,
7600
A
t = 10ms
No voltage
non-repetitive surge current
8000
t = 8.3ms
reapplied
6400
t = 10ms
100% V
RRM
reapplied
6700
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
290
KA
2
s
t = 10ms
No voltage
Initial T
J
= 125°C
265
t = 8.3ms
reapplied
205
t = 10ms
100% V
RRM
reapplied
187
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
2900
KA
2
√
s
t = 0 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
1.18
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
1.25
r
t1
Low level value of on-state slope resistance
0.74
mW
r
t2
High level value of on-state slope resistance
0.70
V
TM
Maximum on-state voltage drop
1.73
V
I
pk
= 600A, T
J
= T
J
max., t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6
, Ig
= 1A
I
L
Typical latching current
1000
mA
Parameter
IRK.F200..
Units Conditions
On-state Conduction
Frequency f
Units
50Hz
400Hz
380
460
560
690
630
710
850
1060
2460
1570
3180
2080
A
A
2500Hz
310
450
530
760
630
860
A
5000Hz
250
360
410
560
410
560
A
10000Hz
180
280
300
410
-
-
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% V
DRM
80% V
DRM
80% V
DRM
-
V
Rise of on-state current di/dt
50
50
-
-
-
A/
μ
s
Case temperature
85
60
85
60
85
60
°C
Equivalent values for RC circuit
10
/0.47
μ
F
10
/0.47
μ
F
10
/0.47
μ
F
I
TM
I
TM
180
o
el
100μs
I
TM
180
o
el
Current Carrying Capacity
IRK.F200-
50
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKHF200-08HJN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) |
| IRKHF200-08HK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a MAGN-A-Pak package |
| IRKHF200-08HKN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) |
| IRKHF200-08HP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) |
| IRKHF200-10CJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) |
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