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参数资料
| 型号： | IRKHF81-04HNN |
| 元件分类： | 晶闸管 |
| 英文描述： | 180 A, 400 V, SCR |
| 封装： | INT-A-PAK-5 |
| 文件页数： | 3/8页 |
| 文件大小： | 127K |
| 代理商： | IRKHF81-04HNN |
IRK.F82.. Series
3
Bulletin I27103 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 125
°C
Tstg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
0.25
K/W
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
0.035
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque ± 10%
IAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to IAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/s
T
J
= 125°C., exponential to = 67% V
DRM
voltage
V
INS
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J = 25°C, t = 1 s
I
RRM
Maximum peak reverse and off-state
30
mA
T
J = 125°C, rated VDRM/VRRM applied
I
DRM
leakage current
Parameter
IRK.F82..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/s
Gate drive 20V, 20
, tr ≤ 1ms, V
D
= 80% V
DRM
T
J
= 25°C
t
rr
Maximum recovery time
2
s
I
TM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25°C
t
q
Maximum turn-off time
N
L
I
TM = 350A, TJ = 125°C, di/dt = -25A/s,
10
15
s
V
R
= 50V, dv/dt = 400V/s linear to 80% V
DRM
Parameter
IRK.F82..
Units Conditions
Switching
Parameter
IRK.F82..
Units Conditions
Triggering
P
GM
Maximum peak gate power
40
W
f = 50 Hz, d% = 50
P
G(AV)
Maximum peak average gate power
2
W
T
J = 125°C, f = 50Hz, d% = 50
I
GM
Maximum peak positive gate current
5
A
T
J = 125°C, tp < 5ms
- V
GM
Maximum peak negative gate voltage
5
V
I
GT
Max. DC gate current required to trigger
200
mA
T
J = 25°C, Vak
12V, Ra = 6
V
GT
DC gate voltage required to trigger
3
V
I
GD
DC gate current not to trigger
20
mA
T
J = 125°C, rated VDRM applied
V
GD
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F82..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
相关PDF资料 |
PDF描述 |
|---|---|
| IRKHF81-04HN | 180 A, 400 V, SCR |
| IRKHF82-04HNN | 180 A, 400 V, SCR |
| IRKHF82-04HN | 180 A, 400 V, SCR |
| IRKKF81-04HNN | 180 A, 400 V, SCR |
| IRKKF81-04HN | 180 A, 400 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKJ166 | 制造商:IRF 制造商全称:International Rectifier 功能描述:NEW INT-A-pak Power Modules |
| IRKJ166/04 | 功能描述:DIODE STD REC 400V 165A INTAPAK RoHS:否 类别:半导体模块 >> 二极管，整流器 系列:- 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件 |
| IRKJ166/04PBF | 功能描述:整流器 400 Volt 165 Amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| IRKJ166/08 | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| IRKJ166/12 | 制造商:IRF 制造商全称:International Rectifier 功能描述:1200V Common Anode in a INT-A-Pak package |
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