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参数资料
| 型号： | IRKL91-04A |
| 厂商： | International Rectifier |
| 英文描述： | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 晶闸管/二极管和晶闸管/晶闸管 |
| 文件页数： | 3/10页 |
| 文件大小： | 316K |
| 代理商： | IRKL91-04A |
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
3
www.irf.com
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
of off-state voltage (5)
T
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
T
J
Junction operating
temperature range
Storage temp. range
T
stg
R
thJC
- 40 to 125
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
0.165
0.135
Per module, DC operation
R
thCS
T
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
15
mA
T
J
= 125
o
C, gate open circuit
Thermal and Mechanical Specifications
500
V/
μ
s
Parameters
IRK.71
IRK.91
Units
Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/
μ
s, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface lat, smooth and greased
V
INS
RMS isolation voltage
V
P
GM
P
G(AV)
Max. average gate power
I
GM
Max. peak gate current
-V
GM
Max. peak negative
gate voltage
Max. peak gate power
12
12
3.0
3.0
3.0
3.0
A
V
GT
required to trigger
Max. gate voltage
4.0
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
2.5
1.7
270
150
80
I
GT
Max. gate current
required to trigger
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
I
GD
Parameters
IRK.71
IRK.91
Units
Conditions
0.25
V
6
mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters
IRK.71
IRK.91
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
0.06
0.04
120
o
0.07
0.05
90
o
0.09
0.06
60
o
0.12
0.08
30
o
0.18
0.12
180
o
0.04
0.03
120
o
0.08
0.05
90
o
0.10
0.06
60
o
0.13
0.08
30
o
0.18
0.12
IRK.71
IRK.91
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
相关PDF资料 |
PDF描述 |
|---|---|
| IRKL91-04AS90 | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKL91-06A | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKL91-06AS90 | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKL91-08A | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKL91-08AS90 | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKL91-04AS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKL91-04S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|90A I(T) |
| IRKL91-06 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|90A I(T) |
| IRKL91-06A | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKL91-06AS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
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