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参数资料
| 型号： | IRKN26/12A |
| 元件分类： | 晶闸管 |
| 英文描述： | 42.39 A, 1200 V, SCR, TO-240AA |
| 封装： | ADD-A-PAK-5 |
| 文件页数： | 2/8页 |
| 文件大小： | 146K |
| 代理商： | IRKN26/12A |
IRK.26 Series
2
Bulletin I27130 rev. G 10/02
www.irf.com
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
IDRM
Code
peak reverse voltage
gate open circuit
125°C
-
VVV
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.26
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
I
T(AV)
Max. average on-state
current (Thyristors)
27
180o conduction, half sine wave,
I
F(AV)
Max. average forward
27
T
C
= 85oC
current (Diodes)
I
O(RMS)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
400
t=10ms
No voltage
or
non-repetitive on-state
420
t=8.3ms
reapplied
I
FSM
or forward current
335
t=10ms
100% V
RRM
350
t=8.3ms
reapplied
470
t=10ms
T
J
= 25oC,
490
t=8.3ms
no voltage reapplied
I
2t
Max. I
2t for fusing
800
t=10ms
No voltage
730
t=8.3ms
reapplied
560
t=10ms
100% V
RRM
510
t=8.3ms
reapplied
1100
t=10ms
T
J
= 25oC,
1000
t=8.3ms
no voltage reapplied
I
2
√t
Max. I
2
√t for fusing (1)
8000
A
2
√s
t=0.1to10ms,no voltage reappl. TJ=TJ max
V
T(TO)
Max. value of threshold
0.92
Low level (3)
voltage (2)
0.95
High level (4)
r
t
Max. value of on-state
12.11
Low level (3)
slope resistance (2)
11.82
High level (4)
V
TM
Max. peak on-state or
I
TM
=
πxI
T(AV)
T
J
= 25oC
V
FM
forward voltage
I
FM
=
πxI
F(AV)
di/dt
Max. non-repetitive rate
T
J
= 25oC, from 0.67 V
DRM
,
of rise of turned on
150
A/s
I
TM
=
π x I
T(AV),
I
g
= 500mA,
current
tr < 0.5 s, tp > 6 s
I
H
Max. holding current
200
T
J
= 25oC, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
400
TJ= 25
oC, anode supply = 6V, resistive load
T
J
= T
J
max
TJ = TJ max
Parameters
IRK.26
Units
Conditions
60
(1) I
2t for time t
x
= I2
√t x √t
x
(2) Average power
= V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3) 16.7% x
π x I
AV
< I <
π x I
AV
(4) I >
π x I
AV
On-state Conduction
Initial T
J
= T
J
max.
A
2s
V
m
1.95
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Sinusoidal
half wave,
Initial T
J
= T
J
max.
相关PDF资料 |
PDF描述 |
|---|---|
| IRKN26/16A | 42.39 A, 1600 V, SCR, TO-240AA |
| IRKT42/16S90P | 100 A, 1600 V, SCR, TO-240AA |
| IRKT56/12P | 135 A, 1200 V, SCR, TO-240AA |
| IRKT56/12S90P | 135 A, 1200 V, SCR, TO-240AA |
| IRKT56/14P | 135 A, 1400 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKN26-12S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|25A I(T) |
| IRKN26-14 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|CA|1.4KV V(RRM)|25A I(T) |
| IRKN26-14S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|CA|1.4KV V(RRM)|25A I(T) |
| IRKN26-16 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|CA|1.6KV V(RRM)|25A I(T) |
| IRKN26-16S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|DOUBLER|CA|1.6KV V(RRM)|25A I(T) |
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