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参数资料
| 型号： | IRKT162-16 |
| 厂商： | International Rectifier |
| 英文描述： | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| 中文描述： | 晶闸管/二极管和晶闸管/晶闸管 |
| 文件页数： | 3/12页 |
| 文件大小： | 381K |
| 代理商： | IRKT162-16 |
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
3
www.irf.com
Thermal and Mechanical Specifications
T
J
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
torque ± 10% busbar to IAP
Approximate weight
Case Style
-40 to 125
°C
T
stg
-40 to 150
°C
R
thJC
0.18
0.18
0.16
K/W
DC operation, per junction
R
thCS
0.05
K/W
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
T
IAP to heatsink
4 to 6
4 to 6
200 (7.1)
New Int-A-Pak
Nm
wt
g(oz)
Triggering
P
GM
P
G(AV)
Max. average gate power
Max. peak gate power
12
W
tp
≤
5ms, T
J
= T
J
max.
f=50Hz, T
J
= T
J
max.
tp
≤
5ms, T
J
= T
J
max.
3
W
I
GM
-V
GT
Max. peak gate current
3
A
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
voltage to trigger
4
V
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
T
J
= - 40°C
T
J
= 25°C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
Anode supply = 6V, resistive
load; Ra = 1
2.5
1.7
270
150
80
0.3
I
GT
Max. required DC gate
current to trigger
Anode supply = 6V, resistive
load; Ra = 1
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Max. rate of rise of
turned-on current
V
I
GD
10
mA
di/
dt
300
A/μs
@ T
J
= T
J
max., I
TM
= 400A
rated V
DRM
applied
Sinusoidal conduction @ T
J
max.
120
o
90
o
Rectangular conduction @ T
J
max.
120
o
90
o
Devices
Units
180
o
60
o
30
o
180
o
60
o
30
o
IRK.136
0.007
0.01
0.013
0.0155
0.017
0.009
0.012
0.014
0.015
0.017
IRK.142
0.0019
0.0019
0.0020
0.0020
0.0021
0.0018
0.0022
0.0023
0.0023
0.0020 K/W
IRK.162
0.0030
0.0031
0.0032
0.0033
0.0034
0.0029
0.0036
0.0039
0.0041
0.0040
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Parameter
IRK.136
IRK.142
IRK.162
Units Conditions
Blocking
I
RRM
I
DRM
Maximum peak reverse and
off-state leakage current
50
mA
T
J
= 125
o
C
V
INS
RMS isolation voltage
3500
V
50Hz, circuit to base, all terminals shorted, t = 1s
dV/dt critical rate of rise of off-state voltage
1000
V/μs
T
J
= T
J
max., exponential to 67% rated V
DRM
相关PDF资料 |
PDF描述 |
|---|---|
| IRKT162-04 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKT162-08 | THYRISTOR/DIODE and THYRISTOR/THYRISTOR |
| IRKT136-04 | 20 GRAY 10X30 PVC 300 UL 1569 |
| IRKH136-04 | Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Brown; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes |
| IRKL136-04 | Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Color:Brown; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKT162-16N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|160A I(T) |
| IRKT166/16 | 制造商:n/a 功能描述:_ |
| IRKT16AS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:ADD-A-pak-TM GEN V Power Modules |
| IRKT170-04 | 功能描述:SCR模块 400 Volt 170 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| IRKT170-04D20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SCR / SCR and SCR / DIODE |
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