- 您现在的位置：买卖IC网 > PDF目录384505 > IRKT230-18D20 (International Rectifier) TERM RING 16-14AWG HS INSUL PDF资料下载
参数资料
| 型号： | IRKT230-18D20 |
| 厂商： | International Rectifier |
| 英文描述： | TERM RING 16-14AWG HS INSUL |
| 中文描述： | 晶闸管/可控硅和SCR /二极管 |
| 文件页数： | 3/6页 |
| 文件大小： | 157K |
| 代理商： | IRKT230-18D20 |
IRK.170, .230, .250 Series
3
Bulletin I27102 rev. C 05/02
www.irf.com
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
V
INS
RMS isolation voltage
dv/
dt
Critical rate of rise of off-state voltage
50
mA
T
J
=T
J
max.
3000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
V/
μ
s T
J
= T
J
max, exponential to 67% rated V
DRM
1000
T
J
T
stg
R
thJC
Maximum thermal resistance
junction to case
Junction operating temperature
Storage temperature range
-40 to 130
-40 to 150
o
C
o
C
Mounting surface flat, smooth and greased
(per module)
A mounting compound is recommended and the
tourque should be rechecked after a period of
about 3 hours to allow for the spread of the
compound
T
Mounting tourque ±10%
MAP to heatsink
Busbar to MAP
4 to 6
4 to 6
Nm
Nm
wt
Approximate weight
500
17.8
g
oz
Case style
MAGN-A-pak
I
P
GM
Maximum peak gate power
10.0
W
tp
≤
5ms,
T
J
= T
J
max.
P
G(AV)
Maximum average gate power
2.0
W
f = 50Hz,
T
J
= T
J
max.
+I
GM
Maximum peak gate current
3.0
A
tp
≤
5ms,
T
J
= T
J
max.
-V
GT
Max. peak negative gate voltage
5.0
V
tp
≤
5ms,
T
J
= T
J
max.
V
GT
Maximum required DC gate
4.0
V
T
J
= - 40
o
C
T
J
= 25
o
C
T
J
= T
J
max.
T
J
= - 40
o
C
T
J
= 25
o
C
T
J
= T
J
max.
Anode supply = 12V, resistive
load ; Ra = 1
voltage to trigger
3.0
V
2.0
V
I
GT
Maximum required DC gate
350
mA
Anode supply = 12V, resistive
load ; Ra = 1
current to trigger
200
mA
100
mA
V
GD
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Max rate of rise of
turned-on current
I
GD
di/
dt
Blocking
Triggering
Thermal and Mechanical Specifications
0.25
V
@ T
J
= T
J
max., rated V
DRM
applied
10.0
mA @ T
J
= T
J
max., rated V
DRM
applied
500
A/
μ
s @ T
J
= T
J
max., I
TM
= 400 A rated V
DRM
applied
0.17
0.125
0.125
K/W Per junction, DC operation
R
thC-S
Thermal resistance, case to heatsink
0.02
0.02
0.02
K/W
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
相关PDF资料 |
PDF描述 |
|---|---|
| IRKT230-20D20 | SCR / SCR and SCR / DIODE |
| IRKT250-04D20 | SCR / SCR and SCR / DIODE |
| IRKT250-08D20 | SCR / SCR and SCR / DIODE |
| IRKT250-12D20 | SCR / SCR and SCR / DIODE |
| IRKT250-16 | SCR / SCR and SCR / DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKT230-18D20N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.8KV V(RRM)|230A I(T) |
| IRKT230-18N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.8KV V(RRM)|230A I(T) |
| IRKT230-20 | 功能描述:SCR模块 2000 Volt 230 Amp RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| IRKT230-20D20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SCR / SCR and SCR / DIODE |
| IRKT230-20D20N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|2KV V(RRM)|230A I(T) |
发布紧急采购，3分钟左右您将得到回复。