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参数资料
| 型号： | IRKT250-16D20 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 555 A, 1600 V, SCR |
| 封装： | MAGN-A-PAK-5 |
| 文件页数： | 3/7页 |
| 文件大小： | 170K |
| 代理商： | IRKT250-16D20 |
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
I
RRM
Max. peak reverse and off-state
50
mA T
J =TJ max.
I
DRM
leakage current
V
INS
RMS isolation voltage
3000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
dv/dt Critical rate of rise of off-state voltage
1000
V/
sT
J = TJ max, exponential to 67% rated VDRM
T
J
Junction operating temperature
-40 to 130
o
C
T
stg
Storage temperature range
-40 to 150
o
C
R
thJC Maximum thermal resistance
junction to case
Mounting surface flat, smooth and greased
(per module)
T
Mounting tourque ±10%
A mounting compound is recommended and the
MAP to heatsink
4 to 6
Nm tourque should be rechecked after a period of
Busbar to MAP
4 to 6
Nm about 3 hours to allow for the spread of the
compound
wt
Approximate weight
500
g
17.8
oz
Case style
MAGN-A-pak
I
P
GM
Maximum peak gate power
10.0
W
tp
≤ 5ms,
T
J = TJ max.
P
G(AV) Maximum average gate power
2.0
W
f = 50Hz,
T
J = TJ max.
+I
GM
Maximum peak gate current
3.0
A
tp
≤ 5ms,
T
J = TJ max.
-V
GT
Max. peak negative gate voltage
5.0
V
tp
≤ 5ms,
T
J = TJ max.
V
GT
Maximum required DC gate
4.0
V
T
J = - 40
o
C
Anode supply = 12V, resistive
voltage to trigger
3.0
V
T
J = 25
o
C
load ; Ra = 1
2.0
V
T
J = TJ max.
I
GT
Maximum required DC gate
350
mA
T
J = - 40
o
C
Anode supply = 12V, resistive
current to trigger
200
mA
T
J = 25
o
C
load ; Ra = 1
100
mA
T
J = TJ max.
V
GD
Maximum gate voltage
that will not trigger
I
GD
Maximum gate current
that will not trigger
di/
dt
Max rate of rise of
turned-on current
Blocking
Triggering
Thermal and Mechanical Specifications
0.25
V
@ T
J= TJ max., rated VDRM applied
10.0
mA @ T
J= TJ max., rated VDRM applied
500
A/
s@ T
J= TJ max., ITM = 400 A rated VDRM applied
0.17
0.125
K/W Per junction, DC operation
R
thC-S Thermal resistance, case to heatsink
0.02
K/W
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
Document Number: 93745
www.vishay.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKT250-16D20N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|250A I(T) |
| IRKT250-16N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|250A I(T) |
| IRKT26 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKT26/04A | 功能描述:SCR DBL HISCR 400V 27A ADD-A-PAK RoHS:否 类别:半导体模块 >> SCR 系列:- 其它有关文件:SCR Module Selection Guide 标准包装:10 系列:- 结构:串联 - SCR/二极管 SCR 数目，二极管:1 SCR，1 个二极管 电压 - 断路:1600V 电流 - 栅极触发电流 (Igt)（最大）:150mA 电流 - 导通状态 (It (AV))（最大）:95A 电流 - 导通状态 (It (RMS))（最大）:210A 电流 - 非重复电涌，50、60Hz (Itsm):1785A，1870A 电流 - 维持(Ih):250mA 安装类型:底座安装 封装/外壳:ADD-A-PAK（3 + 2） 包装:散装 其它名称:*IRKL92/16AIRKL92/16IRKL92/16-ND |
| IRKT26/04AS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:ADD-A-pak-TM GEN V Power Modules |
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