参数资料
型号: IRKT41/16S90P
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 晶闸管
英文描述: 100 A, 1600 V, SCR, TO-240AA
封装: LEAD FREE, POWER, ADD-A-PAK-7
文件页数: 5/11页
文件大小: 311K
代理商: IRKT41/16S90P
IRK.41, .56 Series
Bulletin I27213 03/06
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
R
thCS
Typicalthermalresistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
5
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT41/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at VRRM, VDRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J = 125
o
C, linear to 0.67 V
DRM,
of off-state voltage (5)
gate open circuit
15
mA
T
J = 125
o
C, gate open circuit
500
V/
s
Blocking
V
INS
RMS isolation voltage
V
Triggering
P
GM
Max. peak gate power
10
P
G(AV) Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
TJ = - 40°C
2.5
TJ = 25°C
1.7
TJ = 125°C
270
TJ = - 40°C
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters
IRK.41
IRK.56
Units
Conditions
0.25
V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J = 125
o
C,
rated V
DRM applied
T
J = 125
o
C,
rated V
DRM applied
Parameters
IRK.41
IRK.56
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.41
0.11
0.13
0.17
0.23
0.34
0.09
0.14
0.18
0.23
0.34
IRK.56
0.09
0.11
0.13
0.18
0.27
0.07
0.11
0.14
0.19
0.28
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Document Number: 94419
www.vishay.com
3
相关PDF资料
PDF描述
IRKT42/06P 100 A, 600 V, SCR, TO-240AA
IRKT42/08P 100 A, 800 V, SCR, TO-240AA
IRKT42/08S90P 100 A, 800 V, SCR, TO-240AA
IRKT42/10P 100 A, 1000 V, SCR, TO-240AA
IRKT42/12P 100 A, 1200 V, SCR, TO-240AA
相关代理商/技术参数
参数描述
IRKT41-18 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.8KV V(RRM)|40A I(T)
IRKT41-18S90 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|1.8KV V(RRM)|40A I(T)
IRKT42/04A 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules
IRKT42/04AS90 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules
IRKT42/06A 功能描述:SCR DBL 2SCR 600V 40A ADD-A-PAK RoHS:否 类别:半导体模块 >> SCR 系列:- 其它有关文件:SCR Module Selection Guide 标准包装:10 系列:- 结构:串联 - SCR/二极管 SCR 数目,二极管:1 SCR,1 个二极管 电压 - 断路:1600V 电流 - 栅极触发电流 (Igt)(最大):150mA 电流 - 导通状态 (It (AV))(最大):95A 电流 - 导通状态 (It (RMS))(最大):210A 电流 - 非重复电涌,50、60Hz (Itsm):1785A,1870A 电流 - 维持(Ih):250mA 安装类型:底座安装 封装/外壳:ADD-A-PAK(3 + 2) 包装:散装 其它名称:*IRKL92/16AIRKL92/16IRKL92/16-ND