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参数资料
| 型号： | IRKT56/04P |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 135 A, 400 V, SCR, TO-240AA |
| 封装： | LEAD FREE, POWER, ADD-A-PAK-7 |
| 文件页数： | 5/11页 |
| 文件大小： | 311K |
| 代理商： | IRKT56/04P |
IRK.41, .56 Series
Bulletin I27213 03/06
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
R
thCS
Typicalthermalresistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
5
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKT41/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at VRRM, VDRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
T
J = 125
o
C, linear to 0.67 V
DRM,
of off-state voltage (5)
gate open circuit
15
mA
T
J = 125
o
C, gate open circuit
500
V/
s
Blocking
V
INS
RMS isolation voltage
V
Triggering
P
GM
Max. peak gate power
10
P
G(AV) Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
TJ = - 40°C
2.5
TJ = 25°C
1.7
TJ = 125°C
270
TJ = - 40°C
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters
IRK.41
IRK.56
Units
Conditions
0.25
V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J = 125
o
C,
rated V
DRM applied
T
J = 125
o
C,
rated V
DRM applied
Parameters
IRK.41
IRK.56
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.41
0.11
0.13
0.17
0.23
0.34
0.09
0.14
0.18
0.23
0.34
IRK.56
0.09
0.11
0.13
0.18
0.27
0.07
0.11
0.14
0.19
0.28
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Document Number: 94419
www.vishay.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKT56-04S90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|55A I(T) |
| IRKT56-06 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|55A I(T) |
| IRKT5606A | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKT56-06A | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules |
| IRKT5606AS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
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