- 您现在的位置：买卖IC网 > PDF目录377533 > IRKTF81-08HLN (International Rectifier) FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR PDF资料下载
参数资料
| 型号： | IRKTF81-08HLN |
| 厂商： | International Rectifier |
| 英文描述： | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 快速晶闸管/二极管和晶闸管/晶闸管 |
| 文件页数： | 3/8页 |
| 文件大小： | 127K |
| 代理商： | IRKTF81-08HLN |
IRK.F82.. Series
3
Bulletin I27103 rev. A 09/97
www.irf.com
T
J
T
stg
Max. junction operating temperature range
- 40 to 125
°C
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.25
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.035
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque ± 10%
IAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to IAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/μs
T
J
= 125°C., exponential to = 67% V
DRM
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J
= 25°C, t = 1 s
T
J
= 125°C, rated V
DRM
/V
RRM
applied
Maximum peak reverse and off-state
leakage current
30
mA
Parameter
IRK.F82..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/μs
Gate drive 20V, 20
, tr
≤
1ms, V
D
= 80% V
DRM
T
J
= 25°C
I
TM
= 350A, di/dt = -25A/μs, V
R
= 50V, T
J
= 25°C
I
TM
= 350A, T
J
= 125°C, di/dt = -25A/μs,
V
R
= 50V, dv/dt = 400V/μs linear to 80% V
DRM
t
rr
t
q
Maximum recovery time
2
μs
Maximum turn-off time
N
L
10
15
μs
Parameter
IRK.F82..
Units Conditions
Switching
Parameter
IRK.F82..
Units Conditions
Triggering
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
40
W
f = 50 Hz, d% = 50
Maximum peak average gate power
2
W
T
J
= 125°C, f = 50Hz, d% = 50
T
J
= 125°C, t
p
< 5ms
Maximum peak positive gate current
5
A
Maximum peak negative gate voltage
5
V
Max. DC gate current required to trigger
200
mA
T
J
= 25°C, V
ak
12V, Ra = 6
DC gate voltage required to trigger
3
V
DC gate current not to trigger
20
mA
T
J
= 125°C, rated V
DRM
applied
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F82..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
相关PDF资料 |
PDF描述 |
|---|---|
| IRKTF82-04HL | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKTF82-04HN | FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| IRKTF81-04HN | 16-bit Incident-Wave Switching Bus Transceivers With 3-State Outputs 48-TSSOP -40 to 85 |
| IRKTF81-08HL | 16-bit Incident-Wave Switching Bus Transceivers With 3-State Outputs 48-SSOP -40 to 85 |
| IRKTF81-08HN | 16-bit Incident-Wave Switching Bus Transceivers With 3-State Outputs 48-SSOP -40 to 85 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRKU/V71 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ THYRISTOR |
| IRKU/V91 | 制造商:IRF 制造商全称:International Rectifier 功能描述:THYRISTOR/ THYRISTOR |
| IRKU105/04 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|105A I(T) |
| IRKU105/04A | 功能描述:SCR CC 2SCR 400V 105A ADD-A-PAK RoHS:否 类别:半导体模块 >> SCR 系列:- 其它有关文件:SCR Module Selection Guide 标准包装:10 系列:- 结构:串联 - SCR/二极管 SCR 数目，二极管:1 SCR，1 个二极管 电压 - 断路:1600V 电流 - 栅极触发电流 (Igt)（最大）:150mA 电流 - 导通状态 (It (AV))（最大）:95A 电流 - 导通状态 (It (RMS))（最大）:210A 电流 - 非重复电涌，50、60Hz (Itsm):1785A，1870A 电流 - 维持(Ih):250mA 安装类型:底座安装 封装/外壳:ADD-A-PAK（3 + 2） 包装:散装 其它名称:*IRKL92/16AIRKL92/16IRKL92/16-ND |
| IRKU105/04AS90 | 制造商:IRF 制造商全称:International Rectifier 功能描述:ADD-A-pak GEN V Power Modules THYRISTOR/ THYRISTOR |
发布紧急采购，3分钟左右您将得到回复。