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参数资料
| 型号： | IRKUF82-04HNN |
| 元件分类： | 晶闸管 |
| 英文描述： | 180 A, 400 V, SCR |
| 封装： | INT-A-PAK-7 |
| 文件页数： | 8/8页 |
| 文件大小： | 127K |
| 代理商： | IRKUF82-04HNN |
IRK.F82.. Series
8
Bulletin I27103 rev. A 09/97
www.irf.com
Fig. 15 - Gate Characteristics
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (s)
P
e
a
kO
n
-s
ta
te
C
u
rre
n
t(
A
)
150
Snubber circuit
R
= 22 ohms
C
= 0.15 F
V
= 80% V
s
D
DRM
IRK.F82.. Series
Trapezoidal Pulse
T
= 90 °C, di/dt 50A/s
C
tp
1E4 1E11E2
1E31E4
50 Hz
400
1000
2500
5000
Pulse Basewidth (s)
Snubber circuit
R
= 22 ohms
C
= 0.15 F
V
= 80% V
s
D
DRM
150
IRK.F 82.. Series
Trapezoidal Pulse
T
= 90 °C, di/dt 100A/s
C
tp
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
1
0.1
0.01
P
e
a
k
O
n
-s
ta
te
C
u
rre
n
t(
A
)
IRK.F82.. Series
Sinusoidal pulse
0.05
0.25
0.5
2.5
10 joules per pulse
Pulse Basewidth (s)
tp
5
1E4 1E11E2
1E31E4
1
0.1
Pulse Basewidth (s)
0.05
0.25
0.5
2.5
5
10 joules per pulse
IRK.F82.. Series
Trapezoidal Pulse
di/dt 50A/s
tp
1E1
0.1
1
10
100
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
°C
Tj
=
1
2
5
°
C
Tj=
-40
°
C
(1)
(2)
(3)
Instantaneous Gate Current (A)
In
st
ant
a
n
e
o
u
s
G
a
te
V
o
lt
ag
e
(
V
)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
<=30% rated di/dt : 10 V, 10 ohms
(1) PGM = 10W, tp = 10ms
(2) PGM = 20W, tp = 5ms
(3) PGM = 40W, tp = 2.5ms
IRK.F82.. Series
Frequency Limited by PG(AV)
rated di/dt : 20 V, 10 ohms tr<=1 s
tr<=1 s
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| IRKHF82-04HLN | 180 A, 400 V, SCR |
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