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参数资料
| 型号： | IRL1004S |
| 厂商： | International Rectifier |
| 英文描述： | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
| 中文描述： | N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管） |
| 文件页数： | 2/10页 |
| 文件大小： | 123K |
| 代理商： | IRL1004S |
IRL1004S/1004L
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 0.23mH
R
G
= 25
, I
AS
= 78A. (See Figure 12)
I
SD
≤
78A, di/dt
≤
370A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 78A, V
GS
= 0V
T
J
= 25°C, I
F
= 78A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
78
180
1.3
120
270
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
130
520
A
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4
Uses IRL1004 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
40
–––
–––
0.04
–––
––– 0.0065
–––
––– 0.009
1.0
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
–––
210
–––
25
–––
14
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 78A
V
GS
= 4.5V, I
D
= 65A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 78A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 78A
V
DS
= 32V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 20V,
I
D
= 78A,
R
G
= 2.5
,
R
D
= 0.18
, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
–––
25
250
100
-100
100
32
43
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
nC
ns
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
5330 –––
1480 –––
320
pF
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
Internal Source Inductance
7.5
nH
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