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| 型号： | IRL3103STRL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 64A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 64A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 34A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 33nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1650pF @ 25V |
| 功率 - 最大： | 94W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
PD - 94162
IRL3103S
l
l
l
Advanced Process Technology
Surface Mount (IRL3103S)
Low-profile through-hole (IRL3103L)
IRL3103L
HEXFET ? Power MOSFET
l
l
175 ° C Operating Temperature
Fast Switching
D
V DSS = 30V
l Fully Avalanche Rated
Description
Advanced HEXFET ? Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
G
S
D 2 Pak
IRL3103S
Max.
R DS(on) = 12m ?
I D = 64A
TO-262
IRL3103L
Units
I D @ T C = 25 ° C
Continuous Drain Current, V GS @ 10V
64
I D @ T C = 100 ° C
I DM
P D @T C = 25 ° C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
45
220
94
0.63
± 16
34
22
5.0
A
W
W/ ° C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf ? in (1.1N ? m)
° C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
–––
–––
1.6
40
° C/W
www.irf.com
1
02/14/02
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相关代理商/技术参数 |
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|---|---|
| IRL3103STRLPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL3103STRR | 功能描述:MOSFET N-CH 30V 64A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL3103STRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 64A 3PIN D2PAK - Tape and Reel |
| IRL3103STRRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL3202 | 制造商:International Rectifier 功能描述: |
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