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| 型号： | IRL3402STRR |
| 厂商： | International Rectifier |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 85A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 51A，7V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 78nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3300pF @ 15V |
| 功率 - 最大： | 110W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRL3402S
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
20
???
??? V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
???
0.02
??? V/°C Reference to 25°C, I D = 1mA ?
0.010 V GS = 4.5V, I D = 51A ?
?
25 V DS = 20V, V GS = 0V
250 V DS = 16V, V GS = 0V, T J = 150°C
100 V GS = 10V
-100 V GS = -10V
ns
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
???
???
0.70
65
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
10
140
80
120
0.008 V GS = 7.0V, I D = 51A ?
??? V V DS = V GS , I D = 250μA
??? S V DS = 10V, I D = 51A ?
μA
nA
78 I D = 51A
18 nC V DS = 10V
30 V GS = 4.5V, See Fig. 6 ??
??? V DD = 10V
??? I D = 51A
??? R G = 5.0 ?, V GS = 4.5V
??? R D = 0.19 ?, ??
L S
Internal Source Inductance
??? 7.5 ???
nH
Between lead,
and center of die contact
C iss
C oss
Input Capacitance
Output Capacitance
???
???
3300 ??? V GS = 0V
1400 ??? pF V DS = 15V
C rss
Reverse Transfer Capacitance
??? 510 ??? ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
??? ???
??? ???
85
340
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
??? ??? 1.3 V T J = 25°C, I S = 51A, V GS = 0V ?
??? 72 110 ns T J = 25°C, I F = 51A
??? 160 240 nC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature.
? Starting T J = 25°C, L = 220μH
R G = 25 ? , I AS =51A.
? I SD ≤ 51A, di/dt ≤ 82A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRL3402 data and test conditions
? Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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