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参数资料
| 型号： | IRL3713L |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 2/11页 |
| 文件大小： | 236K |
| 代理商： | IRL3713L |
IRL3713/S/L
2
www.irf.com
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Parameter
Min
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ
–––
0.027
2.6
3.3
–––
–––
–––
–––
–––
–––
Max Units
–––
–––
3.0
4.0
2.5
50
20
100
200
-200
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V
V/°C
V
GS(th)
Gate Threshold Voltage
V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
OSS
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Min
76
–––
–––
–––
Typ
–––
75
24
37
61
–––
16
160
40
57
5890
3130
630
Max Units
–––
110
–––
–––
92
3.4
–––
–––
–––
–––
–––
–––
–––
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S
nC
0.5
–––
–––
–––
–––
–––
–––
–––
Symbol
E
AS
I
AR
Diode Characteristics
Parameter
Units
mJ
A
Symbol
Parameter
Min
Typ
Max Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
–––
–––
0.80
0.68
75
140
78
160
1.3
–––
110
210
120
240
t
rr
Q
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
nC
T
J
= 125°C, I
F
= 30A, V
R
= 20V
di/dt = 100A/μs
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
R
= 0V
di/dt = 100A/μs
Conditions
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
MOSFET symbol
showing the
–––
Conditions
V
DS
= 15V, I
D
= 30A
I
D
= 30A
V
DS
= 15V
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 15V
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
1530
46
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 38A
V
GS
= 4.5V, I
D
= 30A
V
DS
= V
GS
, I
D
= 250μA
Max
V
DD
= 15V
I
D
= 30A
R
G
= 1.8
Static @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
Avalanche Characteristics
Dynamic @ T
J
= 25°C (unless otherwise specified)
m
I
DSS
Drain-to-Source Leakage Current
μA
Avalanche Current
Typ
–––
nA
ns
pF
Single Pulse Avalanche Energy
I
S
–––
–––
260
V
SD
Diode Forward Voltage
V
A
I
SM
–––
––– 1040
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