参数资料
型号: IRL3803
厂商: International Rectifier
文件页数: 1/9页
文件大小: 0K
描述: MOSFET N-CH 30V 140A TO-220AB
标准包装: 50
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 140A
开态Rds(最大)@ Id, Vgs @ 25° C: 6 毫欧 @ 71A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 140nC @ 4.5V
输入电容 (Ciss) @ Vds: 5000pF @ 25V
功率 - 最大: 200W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: *IRL3803
PD - 91301 D
IRL3803
HEXFET ? Power MOSFET
l
Logic-Level Gate Drive
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
G
D
V DSS = 30V
R DS(on) = 0.006 ?
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
S
TO-220AB
I D = 140A ?
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
140 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
98 ?
470
200
1.3
±16
610
71
20
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
-55 to + 175
300 (1.6mm from case)
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R θ JC
Junction-to-Case
––––
––––
0.75
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––––
––––
0.50
––––
––––
62
°C/W
1/5/04
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IRL3803LPBF 功能描述:MOSFET MOSFT 30V 140A 6mOhm 93.3nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRL3803PBF 功能描述:MOSFET MOSFT 30V 120A 6mOhm 93.3nC LogLvAB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRL3803S 功能描述:MOSFET N-CH 30V 140A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRL3803SHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK