- 您现在的位置：买卖IC网 > PDF目录360969 > IRL5NJ7413 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package PDF资料下载
参数资料
| 型号： | IRL5NJ7413 |
| 英文描述： | 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package |
| 中文描述： | 30V的单个N -沟道高可靠性的贴片MOSFET的- 0.5软件包 |
| 文件页数： | 2/7页 |
| 文件大小： | 113K |
| 代理商： | IRL5NJ7413 |
IRL5NJ7413
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.67
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
22*
88
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.0
120
300
V
nS
nC
T
j
= 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
Typ
—
0.027
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
1.0
30
—
—
—
—
—
—
—
—
0.014
0.020
—
—
25
250
VGS = 10V, ID = 22A
VGS = 4.5V, ID = 22A
VDS = VGS, ID = 250
μ
A
VDS = 10V, IDS = 22A
VDS = 30V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ =125°C
VGS = 16V
VGS = -16V
VGS =10V, ID = 22A
VDS = 24V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
70
20
23
20
80
80
80
—
nC
VDD = 15V, ID = 22A,
VGS =10V, RG = 6.2
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1640
660
80
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
* Current is limited by package
相关PDF资料 |
PDF描述 |
|---|---|
| IRL5Y7413CM | 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
| IRL610S | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB |
| IRL611 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB |
| IRL610S | 200V N-Channel Power MOSFET(漏源电压为200V的N沟道增强型功率MOS场效应管) |
| IRL621 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL5NJ7413SCV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 22A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 22A 3SMD-0.5 - Bulk |
| IRL5NJ7413SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 22A 3SMD-0.5 - Bulk |
| IRL5Y024CM | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 17A 3PIN TO-257 - Bulk |
| IRL5Y024CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 17A 3PIN TO-257 - Bulk |
| IRL5Y024CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 17A 3PIN TO-257 - Bulk |
发布紧急采购，3分钟左右您将得到回复。