参数资料
型号: IRLI2505
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 51A I(D) | SOT-186
中文描述: 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 51A条(丁)|的SOT - 186
文件页数: 1/8页
文件大小: 143K
代理商: IRLI2505
HEXFET
Power MOSFET
IRLI2505
PD - 9.1327A
8/25/97
V
DSS
= 55V
R
DS(on)
= 0.008
I
D
= 58A
S
D
G
TO-220 FULLPAK
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
Parameter
Min.
––––
––––
Typ.
––––
––––
Max.
2.4
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
°C/W
Thermal Resistance
Parameter
Max.
58
41
360
63
0.42
±16
500
54
6.3
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Absolute Maximum Ratings
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
相关PDF资料
PDF描述
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IRLI3705G TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 45A I(D) | TO-220VAR
IRLI3103 HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
IRLI520G TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186
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