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参数资料
| 型号： | IRLI2910 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 143K |
| 代理商： | IRLI2910 |
IRLI2910
Parameter
Min. Typ. Max. Units
100
–––
–––
0.12
–––
––– 0.026
–––
––– 0.030
–––
––– 0.040
1.0
–––
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
100
–––
49
–––
55
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 16A
V
GS
= 5.0V, I
D
= 16A
V
GS
= 4.0V, I
D
= 14A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 29A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 29A
V
DS
= 80V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 29A
R
G
= 1.4
,
V
GS
= 5.0V
R
D
= 1.7
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
140
20
81
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
C
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
3700
630
330
12
–––
–––
–––
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
S
D
G
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 29A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
240
1.8
1.3
350
2.7
V
ns
μC
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 1.2mH
R
G
= 25
, I
AS
= 29A. (See Figure 12)
I
SD
≤
29A, di/dt
≤
490A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
t=60s, =60Hz
Uses IRL2910 data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%.
190
31
pF
nH
μA
A
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