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参数资料
| 型号： | IRLI3615 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 100K |
| 代理商： | IRLI3615 |
IRLI3615
2
www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25
°
C, L = 9.5mH
R
G
= 25
, I
AS
= 8.4A. (See Figure 12)
I
SD
≤
8.4A, di/dt
≤
510A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 8.4A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 8.4A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
1130 1700
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
180
1.3
270
V
ns
nC
Source-Drain Ratings and Characteristics
14
56
A
Min. Typ. Max. Units
150
–––
–––
0.18
–––
–––
0.085
–––
–––
0.095
1.0
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.3
–––
20
–––
110
–––
53
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.4A
V
GS
= 5.0V, I
D
= 8.4A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 8.4A
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 16V
V
GS
= -16V
I
D
= 8.4A
V
DS
= 120V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 75V
I
D
= 8.4A
R
G
= 6.2
,
V
GS
= 10V
R
D
= 8.9
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
–––
–––
V
V/
°
C
V
S
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
140
9.5
53
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1600
–––
290
150
–––
–––
pF
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
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