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参数资料
| 型号： | IRLI520N |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件页数： | 2/2页 |
| 文件大小： | 37K |
| 代理商： | IRLI520N |
IRLI520N
Parameter
Min. Typ. Max. Units
100
–––
–––
0.11
–––
–––
–––
–––
–––
–––
1.0
–––
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
40
–––
35
–––
23
–––
22
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.0A
V
GS
= 5.0V, I
D
= 6.0A
V
GS
= 4.0V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 6.0A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 6.0A
V
DS
= 80V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 6.0A
R
G
= 11
,
V
GS
= 5.0V
R
D
= 8.2
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
0.18
0.22
0.26
2.0
–––
25
250
100
-100
20
4.6
10
–––
–––
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
440
97
50
12
–––
–––
–––
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
S
D
G
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
nH
pF
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 4.7mH
R
G
= 25
, I
AS
= 6.0A. (See Figure 12)
I
SD
≤
6.0A, di/dt
≤
340A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
t=60s, =60Hz
Uses IRL520N data and test conditions
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 6.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 6.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
110
410
1.3
160
620
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
8.1
35
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