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参数资料
| 型号： | IRLM210A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 0.77 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 270K |
| 代理商： | IRLM210A |
IRLM210A
BV
DSS
= 200 V
R
DS(on)
= 1.5
I
D
= 0.77 A
200
0.77
0.62
6.1
±
20
27
0.77
0.18
5.0
1.8
0.014
- 55 to +150
300
69.4
--
①
②
①
①
③
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 200V
n
Lower R
DS(ON)
: 1.185
(Typ.)
Advanced Power MOSFET
FEATURES
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
*
When mounted on the minimum pad size recommended (PCB Mount).
Thermal Resistance
Junction-to-Ambient
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
*
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
o
C)
Continuous Drain Current (T
A
=70
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
＂
from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
*
P
D
*
Rev. A
相关PDF资料 |
PDF描述 |
|---|---|
| IRLR210 | ADVANCED POWER MOSFET |
| IRLR210A | ADVANCED POWER MOSFET |
| IRLU210A | ADVANCED POWER MOSFET |
| IRLRU210A | Advanced Power MOSFET |
| IRLR230A | ADVANCED POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLM210ATF | 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLM220A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM220ATF | 功能描述:MOSFET 200V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLM6302TR | 制造商:International Rectifier 功能描述: |
| IRLM6402GPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET |
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