参数资料
型号: IRLR7821CTRRPBF
厂商: International Rectifier
文件页数: 1/12页
文件大小: 0K
描述: MOSFET N-CH 30V 65A DPAK
标准包装: 3,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 65A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 14nC @ 4.5V
输入电容 (Ciss) @ Vds: 1030pF @ 15V
功率 - 最大: 75W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
PD - 96056
IRLR7821CPbF
HEXFET Power MOSFET
Applications
IRLU7821CPbF
?
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
V DSS R DS(on) max
Qg
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
30V
10m
10nC
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V GS
l
l
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR7821CPbF
I-Pak
IRLU7821CPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
P D @T C = 100°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
± 20
65
47
260
75
37.5
0.50
-55 to + 175
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
2.0
R θ JA
R θ JA
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
–––
–––
50
110
°C/W
Notes ? through ? are on page 11
www.irf.com
1
10/2/06
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