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参数资料
| 型号： | IRLZ44ZSPBF |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mヘ , ID = 51A) |
| 中文描述： | 汽车MOSFET的（减振钢板基本\u003d 55V的，的RDS（on）\u003d 1350ヘ，身份证\u003d 51A条） |
| 文件页数： | 1/13页 |
| 文件大小： | 366K |
| 代理商： | IRLZ44ZSPBF |
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95539
HEXFET
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 13.5m
I
D
= 51A
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
S
D
G
Description
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
D
2
Pak
IRLZ44ZS
TO-220AB
IRLZ44Z
TO-262
IRLZ44ZL
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
Pulsed Drain Current
W
W/°C
V
mJ
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
80
0.53
± 16
78
Max.
51
36
204
110
See Fig.12a, 12b, 15, 16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLZ44ZSTRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Tape and Reel |
| IRLZ44ZSTRLPBF | 功能描述:MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ44ZSTRRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Tape and Reel |
| IRLZ44ZSTRRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLZ4S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET POWER MOSFET |
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