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参数资料
| 型号： | IRPP3624-12A |
| 厂商： | International Rectifier |
| 文件页数： | 13/21页 |
| 文件大小： | 0K |
| 描述： | KIT REF DES 12A 1PH SYNC BUCK |
| 产品变化通告： | (EP) Parts Discontinuation 25/May/2012 |
| 标准包装： | 1 |
| 系列： | POWIR+™ |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 1.8V |
| 电流 - 输出： | 12A |
| 输入电压： | 10.8 ~ 13.2 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 600kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | IR3624，IRF7823，IRF7832Z |
| 相关产品： | IR3624MPBF-ND - IC REG CTRLR BUCK PWM VM 10-MLPD IR3624MTRPBFCT-ND - IC REG CTRLR BUCK PWM VM 10-MLPD IR3624MTRPBFTR-ND - IC REG CTRLR BUCK PWM VM 10-MLPD IRF7832ZTR-ND - MOSFET N-CH 30V 21A 8-SOIC IRF7832Z-ND - MOSFET N-CH 30V 21A 8-SOIC |
IR3624MPBF
Power MOSFET Selection
The IR3624 uses two N-Channel MOSFETs. The
selections criteria to meet power transfer
requirements is based on maximum drain-source
voltage (V DSS ), gate-source drive voltage (V gs ),
maximum output current, On-resistance R DS(on)
and thermal management.
switching losses in synchronous Buck converter.
The synchronous MOSFET turns on under zero
voltage conditions, therefore, the turn on losses
for synchronous MOSFET can be neglected.
With a linear approximation, the total switching
loss can be expressed as:
V ds ( off ) t r + t f
The MOSFET must have a maximum operating
voltage (V DSS ) exceeding the maximum input
P sw =
2 T
*
* I load - - - (10)
voltage (V in ).
The gate drive requirement is almost the same
for both MOSFETs. Logic-level transistor can be
used and caution should be taken with devices at
very low V gs to prevent undesired turn-on of the
complementary MOSFET, which results a shoot-
through current.
The total power dissipation for MOSFETs
includes conduction and switching losses. For
the Buck converter the average inductor current
is equal to the DC load current. The conduction
loss is defined as:
Where:
V ds(off) = Drain to source voltage at the off time
t r = Rise time
t f = Fall time
T = Switching period
I load = Load current
The switching time waveforms is shown in
figure12.
V DS
P cond = (upper switch) = I
P cond = (lower switch) = I
2
load
2
load
? R ds(on) ? D ? ?
? R ds(on) ? (1 ? D) ? ?
90%
? = R ds(on) temperatur e dependency
The R DS(on) temperature dependency should be
considered for the worst case operation. This is
typically given in the MOSFET data sheet.
10%
V GS
Ensure that the conduction losses and switching
t d (ON)
t r
t d (OFF)
t f
losses do not exceed the package ratings or
violate the overall thermal budget.
For this design, IRF8910 is a good choice. The
device provides two N-MOSFETs in a compact
SO-8 package.
The IRF8910 has the following data:
V ds = 20 V , I d = 10 A
R ds ( on ) = 13 . 4 m ? @ V gs = 10 V
The conduction losses will be: P con =0.724W
The switching loss is more difficult to calculate,
Fig. 12: switching time waveforms
From IRF8910 data sheet:
tr = 10ns
tf = 4.1ns
These values are taken under a certain condition
test. For more details please refer to the IRF8910
data sheet.
By using equation (10), we can calculate the
switching losses. P sw =0.37W
even though the switching transition is well
understood. The reason is the effect of the
parasitic components and switching times during
the switching procedures such as turn-on / turn-
off delays and rise and fall times. The control
MOSFET contributes to the majority of the
13
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