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参数资料
| 型号： | IRS2001SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HI/LO SIDE 200V 8-SOIC |
| 标准包装： | 95 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 160ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 200V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IRS2001(S)PbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, C L = 1000 pF and T A = 25 ° C unless otherwise specified.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
toff
tr
tf
MT
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
—
—
—
—
—
160
150
70
35
—
220
220
100
60
50
ns
V S = 0 V
V S = 200 V
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V and T A = 25 ° C unless otherwise specified. The V IN , V TH, and I IN parameters are referenced to
COM. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V IH
V IL
V OH
V OL
I LK
I QBS
I QCC
I IN+
I IN-
V CCUV+
V CCUV-
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Logic “1” input bias current
Logic “0” input bias current
V CC supply undervoltage positive going threshold
V CC supply undervoltage negative going threshold
2.5
—
—
—
—
—
—
—
—
8
7.4
—
—
0.05
0.02
—
30
150
3
—
8.9
8.2
—
0.8
0.1
0.05
50
55
270
10
5
9.8
9
V
μ A
V
V CC = 10 V to 20 V
I O = 2 mA
V B = V S = 200 V
V IN = 0 V or 5 V
V IN = 5 V
V IN = 0 V
V O = 0 V
I O+
Output high short circuit pulsed current
200
290
—
V IN = Logic “1”
mA
PW ≤ 10 μ s
V O = 15 V
I O-
Output low short circuit pulsed current
420
600
—
V IN = Logic “0”
PW ≤ 10 μ s
www.irf.com
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相关PDF资料 |
PDF描述 |
|---|---|
| IRS2003STRPBF | IC DRIVER HALF-BRIDGE 8-SOIC |
| IRS2004PBF | IC DRIVER HALF-BRIDGE 8-DIP |
| IRS2011PBF | IC DRIVER HI/LO SIDE 8-PDIP |
| IRS2101SPBF | IC DRIVER HIGH/LOW SIDE 8-SOIC |
| IRS2103SPBF | IC DRIVER HALF-BRIDGE HV 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2001SPBF | 制造商:International Rectifier 功能描述:IC MOSFET DRIVER |
| IRS2001SPBF | 制造商:International Rectifier 功能描述:MOSFET DR HI/LO SIDE 200V 8SOIC 制造商:International Rectifier 功能描述:MOSFET, DR, HI/LO SIDE, 200V, 8SOIC 制造商:International Rectifier 功能描述:MOSFET, DR, HI/LO SIDE, 200V, 8SOIC; Device Type:MOSFET; Module Configuration:High Side, Low Side; Peak Output Current:600mA; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:160ns; ;RoHS Compliant: Yes |
| IRS2001STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2003PBF | 功能描述:功率驱动器IC Half Brdg Drvr w/ Hi&Lw Side Outpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2003PBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HALF BRIDGE, DIP-8 |
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