参数资料
型号: IRS20124STRPBF
厂商: International Rectifier
文件页数: 13/27页
文件大小: 0K
描述: IC DRIVER DGTL AUDIO 14-SOIC
标准包装: 2,500
类型: MOSFET 驱动器
应用: 放大器,接收器
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOIC(窄型)
包装: 带卷 (TR)
www.irf.com
20
IRS20124S(PbF)
Functional description
Programmable Dead-time
The IRS20124 has an internal deadtime generation
block to reduce the number of external components
in the output stage of a Class D audio amplifier.
Selectable deadtime through the DT/SD pin volt-
age is an easy and reliable function, which re-
quires only two external resistors. The deadtime
generation block is also designed to provide a
constant deadtime interval, independent of Vcc
fluctuations. Since the timings are critical to the
audio performance of a Class D audio amplifier,
the unique internal deadtime generation block is
designed to be immune to noise on the DT/SD
pin and the Vcc pin. Noise-free programmable
deadtime function is available by selecting
deadtime from four preset values, which are opti-
mized and compensated.
How to Determine Optimal Deadtime
Please note that the effective deadtime in an actual
application differs from the deadtime specified in
this datasheet due to finite fall time, tf. The
deadtime value in this datasheet is defined as the
time period from the starting point of turn-off on
one side of the switching stage to the starting
point of turn-on on the other side as shown in Fig.
5. The fall time of MOSFET gate voltage must be
subtracted from the deadtime value in the
datasheet to determine the effective dead time of
a Class D audio amplifier.
(Effective deadtime)
= (Deadtime in datasheet) – (fall time, tf)
HO (or LO)
LO (or HO)
tf
Dead-
time
Effective dead-time
10%
90%
Effective Deadtime
A longer deadtime period is required for a MOSFET
with a larger gate charge value because of the
longer tf. A shorter effective deadtime setting is
always beneficial to achieve better linearity in the
Class D switching stage. However, the likelihood
of shoot-through current increases with narrower
deadtime settings in mass production. Negative
values of effective deadtime may cause excessive
heat dissipation in the MOSFETs, potentially
leading to their serious damage. To calculate the
optimal deadtime in a given application, the fall
time (tf)for both output voltages, HO and LO, in
the actual circuit needs to be measured. In
addition, the effective deadtime can also vary with
temperature and device parameter variations.
Therefore, a minimum effective deadtime of 10 ns
is recommended to avoid shoot-through current
over the range of operating temperatures and
supply voltages.
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