- 您现在的位置：买卖IC网 > PDF目录17551 > IRS2109STRPBF (International Rectifier)IC DVR HALF BRIDGE 8-SOIC PDF资料下载
参数资料
| 型号： | IRS2109STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/27页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRIDGE 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页
Data Sheet No. PD60261
IRS2109/IRS21094(S)PbF
? Lower di/dt gate driver for better noise immunity
Features
? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? 3.3 V, 5 V , and 15 V input logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? High - side output in phase with IN input
? Logic and power ground +/- 5 V offset.
? Internal 540 ns deadtime, and programmable
up to 5 μ s with one external R DT resistor (IRS21094)
? Shutdown input turns off both channels.
? RoHS compliant
Description
The IRS2109/IRS21094 are high voltage, high
speed power MOSFET and IGBT drivers with de-
HALF-BRIDGE DRIVER
Product Summary
V OFFSET 600 V max.
I O +/- 120 mA / 250 mA
V OUT 10 V - 20 V
t on/off (typ.) 750 ns & 200 ns
Deadtim e 540 ns
(programmable up to 5 μ s for IRS21094)
Packages
pendent hig h- and low - side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with stan-
dard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-con-
duction. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high -
side configuration which operates up to 600 V.
Typical Connection
up to 600 V
V CC
V CC
V B
8 Lead SOIC
8 Lead PDIP
14 Lead SOIC
14 Lead PDIP
IN
IN
HO
SD
SD
COM
V S
LO
TO
LOAD
up to 600 V
IRS21094
HO
IRS2109
V CC
V CC
V B
(Refer to Lead Assignments for correct
IN
SD
IN
SD
D T
V S
TO
LOAD
configuration). These diagrams show electrical
connections only. Please refer to our
Application Notes and DesignTips for proper
V SS
R DT
V SS
COM
LO
circuit board layout.
www.irf.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| ABM3B-12.000MHZ-B2-T | CRYSTAL 12.000MHZ 18PF SMD |
| EMA06DRMN-S288 | CONN EDGECARD 12POS .125 EXTEND |
| ESA06DRMH-S288 | CONN EDGECARD 12POS .125 EXTEND |
| ABM3B-8.000MHZ-B2-T | CRYSTAL 8.000 MHZ 18PF SMD |
| IR2101STRPBF | IC DRIVER HIGH/LOW SIDE 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS2110-1PBF | 制造商:International Rectifier 功能描述:IC DRIVER HIGH/LOW SIDE DIP14 |
| IRS2110-2PBF | 制造商:International Rectifier 功能描述:IC HIGH/LOW SIDE DRIVER DIP16 |
| IRS2110PBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr All HiVolt Pins 1 Sd RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2110SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 2A 120ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。