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参数资料
| 型号： | IRS2136D |
| 厂商： | International Rectifier |
| 英文描述： | 3-PHASE BRIDGE DRIVER |
| 中文描述： | 3相桥式驱动器 |
| 文件页数： | 14/23页 |
| 文件大小： | 609K |
| 代理商： | IRS2136D |
www.irf.com
14
IRS213(6,62,63,65,66,67,68)D(J&S)PbF
1 Features Description
1.1 Integrated Bootstrap Functionality
The IRS2136xD family embeds an integrated
bootstrap FET that allows an alternative drive of the
bootstrap supply for a wide range of applications.
There is one bootstrap FET for each channel and it is
connected between each of the floating supply (V
B1
,
V
B2
, V
B3
) and V
CC
(see Fig. 7).
The bootstrap FET of each channel follows the state
of the respective low side output stage (i.e., bootFet is
ON when LO is high, it is OFF when LO is low),
unless the V
B
voltage is higher than approximately
1.1(V
CC
). In that case the bootstrap FET stays off until
the V
B
voltage returns below that threshold (see Fig.
8).
Fig. 7. Simplified BootFet Connection
Vcc=15V
Vth~17V
LO
BootFet
ON
BootFet
OFF
BootFet
ON
Bootstrap FET
state
Phase voltage
Fig. 8. State Diagram
Bootstrap FET is suitable for most PWM modulation
schemes and can be used either in parallel with the
external bootstrap network (diode+resistor) or as a
replacement of it. The use of the integrated bootstrap
as a replacement of the external bootstrap network
may have some limitations in the following situations:
-
when used in non-complementary PWM
schemes (typically 6-step modulations)
-
at a very high PWM duty cycle due to the
bootstrap FET equivalent resistance (R
BS
,
see page 5).
In these cases, better performances can be achieved
by using the IRS2136x non D version with an external
bootstrap network.
2 PCB Layout Tips
2.1 Distance from H to L Voltage
The IRS2136xDJ package lacks some pins (see page
8) in order to maximizing the distance between the
high voltage and low voltage pins. It’s strongly
recommended to place the components tied to the
floating voltage in the respective high voltage portions
of the device (V
B1,2,3
, V
S1,2,3
) side.
2.2 Ground Plane
To minimize noise coupling ground plane must not be
placed under or near the high voltage floating side.
2.3 Gate Drive Loops
Current loops behave like an antenna able to receive
and transmit EM noise (see Fig. 9). In order to reduce
EM coupling and improve the power switch turn on/off
performances, gate drive loops must be reduced as
much as possible. Moreover, current can be injected
inside the gate drive loop via the IGBT collector-to-
gate parasitic capacitance. The parasitic auto-
inductance of the gate loop contributes to develop a
voltage across the gate-emitter increasing the
possibility of self turn-on effect.
Fig. 9. Antenna Loops
2.4 Supply Capacitors
Supply capacitors must be placed as close as
possible to the device pins (V
CC
and V
SS
for the
ground tied supply, V
B
and V
S
for the floating supply)
in order to minimize parasitic inductance/resistance.
PRELIMINARY
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2153 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDGE DRIVER IC |
| IRS21531DPBF | 功能描述:功率驱动器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21531DSPbF | 功能描述:功率驱动器IC SELF-OSCILLATING HALF BRDG DRVR 600V RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21531DSTRPBF | 功能描述:功率驱动器IC Self-Osc Half Bridge Drvr 1.1us RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2153D | 制造商:IRF 制造商全称:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDEGE DRIVER IC |
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