参数资料
型号: IRS21531DSTRPBF
厂商: International Rectifier
文件页数: 2/14页
文件大小: 0K
描述: IC DRVR SELF-OSC HALF BRG 8-SOIC
标准包装: 1
配置: 半桥
输入类型: 自振荡
电流 - 峰: 180mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 15.4 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 1382 (CN2011-ZH PDF)
其它名称: IRS21531DSTRPBFDKR
IRS2153(1)D
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol
V B
V S
V HO
V LO
I RT
V RT
V CT
I CC
I OMAX
dV S /dt
P D
P D
R thJA
R thJA
T J
T S
T L
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
R T pin current
R T pin voltage
C T pin voltage
Supply current (Note 1)
Maximum allowable current at LO and HO due to external
power transistor Miller effect.
Allowable offset voltage slew rate
Maximum power dissipation @ T A ≤ +25 oC, 8-Pin DIP
Maximum power dissipation @ T A ≤ +25 oC, 8-Pin SOIC
Thermal resistance, junction to ambient, 8-Pin DIP
Thermal resistance, junction to ambient, 8-Pin SOIC
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
V B - 25
V S – 0.3
-0.3
-5
-0.3
-0.3
---
-500
-50
---
---
---
---
-55
-55
---
Max.
625
V B + 0.3
V B + 0.3
V CC + 0.3
5
V CC + 0.3
V CC + 0.3
20
500
50
1.0
0.625
85
128
150
150
300
Units
V
mA
V
mA
V/ns
W
oC/W
oC
Note 1: This IC contains a zener clamp structure between the chip V CC and COM which has a nominal
breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low
impedance power source greater than the V CLAMP specified in the Electrical Characteristics section.
2
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