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参数资料
| 型号： | IRS21834PBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/24页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRIDGE 14-DIP |
| 标准包装： | 25 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 180ns |
| 电流 - 峰： | 1.9A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 14-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 14-DIP |
| 包装： | 管件 |
IRS2183/IRS21834(S)PbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, V SS = COM, C L = 1000 pF, T A = 25 °C, DT = V SS unless otherwise specified.
Symbol
Definition
Min.
Typ.
Max. Units Test Conditions
ton
toff
Turn-on propagation delay
Turn-off propagation delay
—
—
180
220
270
330
VS = 0V
V S = 0V or 600V
| ton - toff |
MT
tr
tf
DT
MDT
Delay matching
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DT LO-HO) &
HO turn-off to LO turn-on (DT HO-LO)
Deadtime matching = | DT LO-HO - DT HO-LO |
—
—
—
280
4
—
—
0
40
20
400
5
0
0
35
60
35
520
6
50
600
ns
μ s
ns
V S = 0 V
R DT = 0 ?
R DT = 200 k ? (IR21834)
R DT =0 ?
R DT = 200k ? (IR21834)
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, V SS = COM, DT= V SS and T A = 25 °C unless otherwise specified. The V IL , V IH, and I IN
parameters are referenced to V SS /COM and are applicable to the respective input leads: HIN and LIN. The V O , I O, and
Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V IH
V IL
V OH
V OL
I LK
I QBS
I QCC
I IN+
I IN-
V CCUV+
V BSUV+
V CCUV-
V BSUV-
V CCUVH
V BSUVH
I O+
I O-
Logic “1” input voltage for HIN & logic “0” for LIN
Logic “0” input voltage for HIN & logic “1” for LIN
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Logic “1” input bias current
Logic “0” input bias current
V CC and V BS supply undervoltage positive going
threshold
V CC and V BS supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed current
Output low short circuit pulsed current
2.5
—
—
—
—
20
0.4
—
—
8.0
7.4
0.3
1.4
1.8
—
—
—
—
—
60
1.0
25
—
8.9
8.2
0.7
1.9
2.3
—
0.8
1.4
0.2
50
150
1.6
60
5.0
9.8
9.0
—
—
—
V
μA
mA
μA
V
A
V CC = 10 V to 20 V
I O = 0 A
I O = 20 mA
V B = V S = 600 V
V IN = 0 V or 5 V
HIN = 5 V, LIN = 0 V
HIN = 0 V, LIN = 5 V
V O = 0 V,
PW ≤ 10 μs
V O = 15 V,
PW ≤ 10 μs
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| IRS21834PBF | 制造商:International Rectifier 功能描述:MOSFET DRIVER HI/LO SIDE 600V 14DIP 制造商:International Rectifier 功能描述:MOSFET DRIVER HI/LO SIDE 600V 14DIP; Device Type:MOSFET; Module Configuration:High Side; Peak Output Current:2.3A; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:DIP; No. of Pins:14; Input Delay:180ns; Output ;RoHS Compliant: Yes |
| IRS21834S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS21834SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21834STRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Sft Trn On Lw Sd Invrt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2183PBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Soft Trn On 400ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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