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| 型号： | IRS2183STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/24页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF-BRIDGE 8-SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 180ns |
| 电流 - 峰： | 1.9A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | IRS2183STRPBFDKR |
Data Sheet No. PD60265
IRS2183/IRS21834(S)PbF
Features
HALF-BRIDGE DRIVER
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Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant
Packages
8-Lead PDIP
IRS2183
14-Lead PDIP
IRS21834
Description
The IRS2183/IRS21834 are high voltage,
8-Lead SOIC
IRS2183S
14-Lead SOIC
IRS21834S
high speed power MOSFET and IGBT
drivers with dependent high-side and
Featur e Comparison
low-side referenced output channels.
Proprietary HVIC and latch immune
Part
Input
logic
Cross-
conduction
prevention
Deadtime
(ns)
Ground Pins
ton/toff
(ns)
CMOS technologies enable ruggedized
logic
monolithic construction. The logic input
is compatible with standard CMOS or
LSTTL output, down to 3.3 V logic. The
output drivers feature a high pulse cur-
2181
21814
2183
21834
2184
21844
HIN/LIN
HIN/LIN
IN/SD
no
yes
yes
none
Internal 400
Program 400-5000
Internal 400
Program 400-5000
COM
V SS /COM
COM
V SS/ COM
COM
V SS /COM
180/220
180/220
680/270
rent buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT
in the high-side configuration which operates up to 600 V.
Typical Connection
V CC
up to 600 V
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
up to 600 V
IRS2183
HO
IRS21834
V CC
V CC
V B
HIN
LIN
HIN
LIN
V S
TO
LOAD
DT
(Refer to Lead Assignment for correct pin
configuration) These diagrams show electrical
connections only. Please refer to our Application
V SS
R DT
V SS
COM
LO
Notes and DesignTips for proper circuit board layout.
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2184 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS21844 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER |
| IRS21844MPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21844MTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Sft Trn On Invrt ShutDwn RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21844PBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Sft Trn On Invrt ShutDwn RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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