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| 型号： | IRS2184SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 9/30页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 680ns |
| 电流 - 峰： | 1.9A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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IRS2184/IRS21844(S)PbF
The circuit shown in Figure 11 depicts a half bridge circuit with parasitic elements shown; Figures 12 and 13
show a simplified illustration of the commutation of the current between Q1 and D2. The parasitic
inductances in the power circuit from the die bonding to the PCB tracks are lumped together in L C and L E
for each switch. When the high-side switch is on, V S1 is below the DC+ voltage by the voltage drops
associated with the power switch and the parasitic elements of the circuit. When the high-side power
switch turns off, the load current can momentarily flow in the low-side freewheeling diode due to the
inductive load connected to V S1, for instance (the load is not shown in these figures). This current flows
from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative voltage
between V S1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the V S
pin).
DC+ BUS
L C1
DC+ BUS
+
V LC1
-
DC+ BUS
Q1
D1
Q1
Q1
D1
ON
OFF
Q2
V S1
L E1
L C2
D2
V S 1
Q2
OFF
+
V LE1
-
D2
I U
V S1
Q2
OFF
-
V LC 2
+
-
V D2
+
I U
-
L E2
V LE 2
+
DC- BUS
Figure 9: Parasitic Elements
DC- BUS
Figure 10: V s positive
DC- BUS
Figure 11: V s negative
In a typical power circuit, dV/dt is typically designed to be in the range of 1-5 V/ns. The negative V S
transient voltage can exceed this range during some events such as short circuit and over-current
shutdown, when di/dt is greater than in normal operation.
International Rectifier’s HVICs have been designed for the robustness required in many of today’s
demanding applications. An indication of the IRS2184(4)’s robustness can be seen in Figure 14, where there
is represented the IRS2184(4) Safe Operating Area at V BS =15V based on repetitive negative V S spikes. A
negative V S transient voltage falling in the grey area (outside SOA) may lead to IC permanent damage;
viceversa unwanted functional anomalies or permanent damage to the IC do not appear if negative Vs
transients fall inside SOA.
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2184STRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr Soft Trn On Sngl 400ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21850SPBF | 功能描述:功率驱动器IC 600V 1 IC 10V TO 20V 3.3V 5.5V HIGH SIDE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21850STRPBF | 功能描述:功率驱动器IC Hi Sd Drvr IC 600V Single RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21851SPbF | 功能描述:功率驱动器IC 600V 1 IC 10V TO 20V 3.3V 5.5V HIGH SIDE RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21851SPBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOIC-8 |
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