参数资料
型号: IRS21858STRPBF
厂商: International Rectifier
文件页数: 9/19页
文件大小: 0K
描述: IC DVR HI SIDE DUAL 600V 16SOIC
标准包装: 2,500
配置: 高端
输入类型: 非反相
延迟时间: 160ns
电流 - 峰: 290mA
配置数: 2
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC
包装: 带卷 (TR)
IRS21858SPBF
Dynamic Electrical Characteristics (All values are target data)
(VCC-COM)= (VB-VS)=15V. TA = 25oC. C L = 1000pF unless otherwise specified. All parameters are
reference t o COM.
Symbol             Definition             Min   Typ   Max Units Test Conditions
Internal Operational Amplifier Characteristics
GBD*
t ref_ln_ramp1
Vref Falling time of Linear ramp
reference 9V to 2V
---
277.8
---
μs
C REF =1nF, V SE open,
R RES1 =100K, HIN1=5V,
HIN2=com
GBD*
t ref_ln_ramp2
I ref_ln_ramp1
I ref_ln_ramp2
Gm
G open loop
BW SS
V OS
HO SR+
CMRR
PSRR
Vref Falling time of Linear ramp
reference 9V to 2V
Vref DC current of Linear ramp
reference at 5V
Vref DC current of Linear ramp
reference at 5V
OTA transconductance
Open loop gain
Small signal bandwidth
Input offset voltage
Output positive slew rate
Common mode rejection ratio
Power supply rejection ratio
---
22.68
450
---
45
---
---
---
50
50
14
25.2
500
12
60
3.5
20
4.5
65
65
---
27.72
550
---
---
---
---
---
---
---
μs
uA
uA
mS
dB
MHz
mV
V/μs
dB
dB
C REF =1nF, V SE open,
R RES2 =4.99K, HIN1=5V,
HIN2=5V
C REF =1nF, V SE open,
R RES1 =100K, HIN1=5V,
HIN2=com
C REF =1nF, V SE open,
R RES2 =4.99K, HIN1=5V,
HIN2=5V
CL_HO=1nF,
R RES1,2 open
Cc =1nF,
R RES1,2 open
Cc =1nF,
R RES1,2 open
R RES1,2 open
CL_HO=1nF,
R RES1,2 open
R RES1,2 open
R RES1,2 open
Propagation Delay Characteristics
t on
t off
Turn-on delay (HO, HO3)
Turn-off delay (HO, HO3)
---
---
160
160
260
260
t r
t f
Turn-on rise from 10% to 90%
Turn-off fall from 90% to 10%
---
---
60
20
110
50
ns
Gate Drive Mode
C L =1nF
MT
Delay matching, HO & HO3 turn-
on/off
50
GBD*: Guaranteed by design
www.irf.com
9
? 2008 International Rectifier
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