参数资料
型号: IRS2186STRPBF
厂商: International Rectifier
文件页数: 5/27页
文件大小: 0K
描述: IC DRIVER HI/LO SIDE 600V 8-SOIC
标准包装: 1
配置: 高端和低端,独立
输入类型: 非反相
延迟时间: 170ns
电流 - 峰: 4A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
其它名称: IRS2186STRPBFDKR
IR2103(S)PBF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, V SS = COM, C L = 1000 pF and T A = 25 °C unless otherwise specified.
Symbol
t on
t off
t r
t f
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn on/off
Min.
Typ.
170
170
22
18
0
Max.
250
250
38
30
35
Units
ns
Test Conditions
V S = 0 V
V S = 0 V or 600 V
V S = 0 V
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, V SS = COM, and T A = 25 °C unless otherwise specified. The V IL , V IH, and I IN
parameters are referenced to V SS /COM and are applicable to the respective input leads HIN and LIN. The V O , I O,
and R ON parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V IH
V IL
V OH
V OL
I LK
I QBS
I QCC
I IN+
I IN-
V CCUV+
V BSUV+
V CCUV-
V BSUV-
V CCUVH
V BSUVH
I O+
I O-
Definition
Logic ―1‖ input voltage
Logic ―0‖ input voltage
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Logic ―1‖ input bias current
Logic ―0‖ input bias current
V CC and V BS supply undervoltage
positive going threshold
V CC and V BS supply undervoltage
negative going threshold
Hysteresis
Output high short circuit pulsed
current
Output low short circuit pulsed
current
Min.
2.5
20
50
8
7.4
0.3
2
2
Typ.
60
120
25
8.9
8.2
0.7
4
4
Max.
0.8
1.4
0.15
50
150
240
60
5
9.8
9
Units
V
μA
V
A
Test Conditions
V CC = 10 V to 20 V
I O = 0 A
I O = 20 mA
V B = V S = 600 V
V IN = 0 V or 5 V
V IN = 5 V
V IN = 0 V
V O = 0 V,
PW ≤ 10 μs
V O = 15 V,
PW ≤ 10 μs
5
www.irf.com
? 2013 International Rectifier
April 29, 2013
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