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| 型号： | IRS21953SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC DVR HISIDE DUAL LOSIDE 16SOIC |
| 标准包装： | 45 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 380ns |
| 电流 - 峰： | 500mA |
| 配置数： | 2 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC N |
| 包装： | 管件 |
IRS21953SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
parameters are absolute voltages referenced to COM.
All voltage
Symbol
Definition
Min
Max
Units
HIN
LIN1
Floating logic level Input voltage
VSS-0.3
VDD+0.3
LIN2
VDD
VSS
VB
VS
Floating logic input supply voltage
Floating logic input supply return voltage
High side floating well supply voltage
High side floating well supply return voltage
-0.3
VDD-25
-0.3
VB-25
625
VDD+0.3
625
VB+0.3
HO
VCC
LO1
LO2
dVS/dt
dVSS/dt
P D
R θ JA
T J
T S
T L
High side floating gate drive output voltage
Low side supply voltage
Low side output voltage
Allowable VS offset transient relative to earth ground
Allowable VSS offset transient relative to earth ground
Package power dissipation @ T A <=+25 oC
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
VS-0.3
-0.3
-0.3
-
-
-
-
-55
-55
-
VB+0.3
25
VCC+0.3
50
50
1
100
150
150
300
V
V/ns
W
oC/W
oC
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM.
Symbol
Definition
Min
Max
Units
HIN
LIN1
Floating logic level input voltage
VSS
VDD
LIN2
VDD
VSS
Floating logic input supply voltage
Floating logic input supply return voltage
VSS+10
-5
VSS+20
600
VB
VS
HO
VCC
LO1
LO2
T A
High side floating well supply voltage
High side floating well supply return voltage
High side floating gate drive output voltage
Low side supply voltage
Low side output voltage
Ambient temperature
VS+10
-5
VS
10
0
-40
VS+20
600
VB
20
VCC
125
V
oC
Note 1:
Logic operation for V S of –5 V to 600 V. Logic state held for V S of –5 V to –V BS . (Please refer to Design Tip
DT97-3 for more details).
2
相关PDF资料 |
PDF描述 |
|---|---|
| IRS21956SPBF | IC DVR HI SIDE/DUAL LOW 20-SOIC |
| IRS21962SPBF | IC DVR HI SIDE DUAL 600V 16-SOIC |
| IRS2301SPBF | IC DVR HI/LOW SIDE 600V 8-SOIC |
| IRS2302SPBF | IC DRIVER HALF-BRIDGE 8SOIC |
| IRS2304PBF | IC DRIVER HALF-BRIDGE 600V 8-DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS21953STRPBF | 功能描述:功率驱动器IC Hi Sd & Dual Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21956 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Floating Input, High and Low(Dual mode) Side Driver |
| IRS21956S | 制造商:IRF 制造商全称:International Rectifier 功能描述:Floating Input, High and Low(Dual mode) Side Driver |
| IRS21956SPBF | 功能描述:功率驱动器IC High Low Dual DRVR 600V 4.5V 300ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS21956STRPBF | 功能描述:功率驱动器IC Dual Drvr IC w/ floating Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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